Radiation-induced soft error rate analyses for 14 nm FinFET SRAM devices

Abstract

Radiation-induced Soft Error Rate (SER) of SRAM built in 14nm FinFET on bulk technology was extensively characterized. Two different SRAM cells, high-performance (HP) and high-density (HD), were irradiated with alpha particles, thermal neutrons, and high-energy neutrons. Empirical results reveal excellent SER performance of FinFET compared to the prior technology nodes, drastically reducing SER FIT rate by 5-10X. It is found that HP cell is more sensitive to a single event upset than HD cell design. We will discuss the effects of charge collection efficiency as one of major parameter and present supporting simulation results.