JSTS Journal of Semiconductor Technology and Science · 2006 · 38 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationNoiseNoise In Electronic DevicesNoise In Semiconductor DevicesNoise MeasurementShort-channel EffectsMosfet NoiseNoise CharacteristicsNoise CharacterizationNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect TransistorsRandom Telegraph NoiseSemiconductor NoiseTransistor Noise
We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing V DS . With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.