Lateral IMPATT diodes in standard CMOS technology

Abstract

We investigate the use of a lateral IMPATT diode built in 0.25/spl mu/m CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.