Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth

Abstract

A new trench filling epitaxial Si growth process has been proposed for the high aspect ratio doping region. This epitaxial process realizes the reducing void size in the trench compared with a conventional epitaxial process. The influence of the micro-void on multi-RESURF effect has been estimated by using numerical simulation. The decrease of breakdown voltage of simulated structures with micro-void that reflect experimental results is below 2.5% compared with ideal non-void structure.