Quantum Device Simulation

Quantum Device Simulation is a computational methodology within device simulation that models the behavior of semiconductor or nanoscale devices by explicitly accounting for quantum mechanical effects, distinguishing it from classical approaches through its reliance on quantum transport equations such as the Schrödinger-Poisson or non-equilibrium Green’s function formalisms.

251

Publications

14K

Citations

900

Authors

330

Institutions

Publications per year

2017–2026

96

Authors

900

  1. GK
    Gerhard Klimeck

    Purdue University West Lafayette, United States

    8 publications · 227 citations

    8

    h-index

  2. XO
    Xavier Oriols

    Universitat Autònoma de Barcelona, Spain

    8 publications · 218 citations

    8

    h-index

  3. JS
    J. Suñé

    Universitat Autònoma de Barcelona, Spain

    5 publications · 147 citations

    5

    h-index

  4. AA
    Anton Arnold

    TU Wien, Austria

    4 publications · 274 citations

    4

    h-index

  5. DK
    D. K. Ferry

    Arizona State University, United States

    4 publications · 250 citations

    4

    h-index

1–5 of 900

Venues

  1. IEEE Transactions on Electron Devices

    15 publications · 865 citations

    14

    h-index

  2. Journal of Applied Physics

    13 publications · 877 citations

    12

    h-index

  3. Physical review. B./Physical review. B

    PRB · 12 publications · 343 citations

    11

    h-index

  4. Physical Review B

    PRB · 10 publications · 677 citations

    10

    h-index

  5. Applied Physics Letters

    10 publications · 420 citations

    10

    h-index

1–5