Interfacial Contamination

Interfacial Contamination is a phenomenon in wafer bonding characterized by the presence of unwanted substances at the bonding interface, which distinguishes it from other bonding defects by directly impairing atomic adhesion and interfacial integrity between the joined substrates.

59

Publications

2.6K

Citations

265

Authors

97

Institutions

Publications per year

2017–2026

8

Authors

265

  1. SS
    Susanne Stemmer

    University of California, Santa Barbara, United States

    2 publications · 68 citations

    2

    h-index

  2. ZW
    Zefeng Wen

    Southwest Jiaotong University, China

    2 publications · 42 citations

    2

    h-index

  3. KN
    Kang N. Lee

    Glenn Research Center, United States

    2 publications · 140 citations

    2

    h-index

  4. TO
    Tadahiro Ohmi

    Tohoku University, Japan

    2 publications · 30 citations

    2

    h-index

  5. TW
    Tao Wu

    Soochow University, China

    2 publications · 42 citations

    2

    h-index

1–5 of 265

Venues

  1. Applied Physics Letters

    4 publications · 196 citations

    4

    h-index

  2. Journal of The Electrochemical Society

    JES · 3 publications · 148 citations

    3

    h-index

  3. Journal of Applied Physics

    3 publications · 97 citations

    3

    h-index

  4. Japanese Journal of Applied Physics

    JJAP · 2 publications · 106 citations

    2

    h-index

  5. Physics of Fluids

    2 publications · 71 citations

    2

    h-index

1–5