Interfacial Contamination
Interfacial Contamination is a phenomenon in wafer bonding characterized by the presence of unwanted substances at the bonding interface, which distinguishes it from other bonding defects by directly impairing atomic adhesion and interfacial integrity between the joined substrates.
59
Publications
2.6K
Citations
265
Authors
97
Institutions
Publications per year
2017–2026
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97

Tohoku University
Sendai, Japan
3 h-index
9 publications
426 citations

Cleveland State University
Cleveland, United States
2 h-index
2 publications
140 citations

University of Minnesota
Minneapolis, United States
2 h-index
6 publications
558 citations

Soochow University
Suzhou, China
2 h-index
2 publications
42 citations
University of California, Santa Barbara
Santa Barbara, United States
2 h-index
7 publications
271 citations

Southwest Jiaotong University
Chengdu, China
2 h-index
8 publications
168 citations
Texas Instruments (United States)
Dallas, United States
2 h-index
9 publications
316 citations

Pacific Northwest National Laboratory
Richland, United States
1 h-index
2 publications
94 citations
1–8 of 97
4 publications · 196 citations
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JES · 3 publications · 148 citations
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3 publications · 97 citations
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JJAP · 2 publications · 106 citations
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2 publications · 71 citations
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1–5