High-Frequency Gate Drive Design is a specialized methodology within power electronics engineering that specifically addresses the optimization of gate drive circuits for minimizing switching losses and electromagnetic interference in semiconductor devices operating at frequencies typically above several hundred kilohertz.
7
Publications
159
Citations
27
Authors
13
Institutions
Publications per year
2017–2026
2
Parents
Publications
7
A high-frequency resonant gate driver for enhancement-mode GaN power devices
Yu Long, Weimin Zhang, Daniel Costinett et al. · 2015 · 23 citations
1–5 of 7
Authors
27
- GC
1
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- SA
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- DC
1
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- NL
1
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- AR
1
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1–5 of 27
Institutions
13
École de Technologie Supérieure
Montreal, Canada
1 h-index
4 publications
112 citations
Imperial College London
London, United Kingdom
1 h-index
3 publications
33 citations
Knoxville College
Knoxville, United States
1 h-index
1 publications
23 citations
Nanjing University of Aeronautics and Astronautics
Nanjing, China
1 h-index
1 publications
56 citations
Texas A&M University
College Station, United States
1 h-index
3 publications
33 citations
Stanford University
Stanford, United States
1 h-index
3 publications
48 citations
Université du Québec à Montréal
Montreal, Canada
1 h-index
4 publications
112 citations
Indian Institute of Technology Delhi
New Delhi, India
1 h-index
2 publications
28 citations
1–8 of 13
Venues
- IEEE Transactions on Circuits & Systems II Express Briefs
1 publications · 28 citations
1
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- IEEE Transactions on Power Electronics
1 publications · 56 citations
1
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1–2