Weimin Zhang

Investigation of Gallium Nitride Devices in High-Frequency LLC Resonant Converters

Weimin Zhang, Fred Wang, Daniel Costinett et al. · IEEE Transactions on Power Electronics · 2016 · 159 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration

Zheyu Zhang, Weimin Zhang, Fred Wang et al. · 2012 · 128 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation of 600 V cascode GaN HEMT in device characterization and all-GaN-based LLC resonant converter

Weimin Zhang, Zhuxian Xu, Zheyu Zhang et al. · 2013 · 85 citations

Engineering, Electrical Engineering, Microelectronics +16

Evaluation and comparison of silicon and gallium nitride power transistors in LLC resonant converter

Weimin Zhang, Yu Long, Zheyu Zhang et al. · 2012 · 71 citations

Engineering, Electrical Engineering, Materials Science +17

Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels

J.G. Fossum, Weimin Zhang · IEEE Transactions on Electron Devices · 2003 · 51 citations

Engineering, Computer Engineering, Electrical Engineering +17