Disorder-induced Defects

Disorder-Induced Defects is a category of point defects in semiconductor materials arising from random deviations in atomic arrangement due to structural disorder, distinguished from intrinsic or extrinsic defects by their origin in non-periodic lattice distortions rather than stoichiometric imbalances or impurity doping.

451

Publications

20.6K

Citations

1.8K

Authors

627

Institutions

Publications per year

2017–2026

77

Authors

1.8K

  1. NH
    N. Holonyak

    University of Illinois Urbana-Champaign, United States

    5 publications · 348 citations

    5

    h-index

  2. DF
    Diana Farkas

    Virginia Tech, United States

    4 publications · 197 citations

    4

    h-index

  3. YM
    Y. Mishin

    George Mason University, United States

    4 publications · 197 citations

    4

    h-index

  4. CL
    Chenyang Lu

    University of Michigan, United States

    3 publications · 342 citations

    3

    h-index

  5. SZ
    Shijun Zhao

    City University of Hong Kong, Hong Kong SAR China

    3 publications · 202 citations

    3

    h-index

1–5 of 1.8K

Venues

  1. Physical review. B, Condensed matter

    PRB · 28 publications · 1.2K citations

    17

    h-index

  2. Applied Physics Letters

    22 publications · 1.1K citations

    16

    h-index

  3. Journal of Applied Physics

    20 publications · 476 citations

    14

    h-index

  4. Journal of Crystal Growth

    14 publications · 670 citations

    12

    h-index

  5. Physical Review Letters

    PRL · 13 publications · 859 citations

    12

    h-index

1–5