Charge-coupled Device Sensitivity

Charge-Coupled Device Sensitivity is a metric that quantifies the efficiency of a charge-coupled device in converting incident photons into electronic charge, distinguishing it from other image receptor sensitivity metrics by its specific dependence on quantum efficiency, charge transfer efficiency, and noise characteristics inherent to CCD architecture.

49

Publications

2K

Citations

248

Authors

76

Institutions

Publications per year

2017–2026

7

Authors

248

  1. JR
    James R. Janesick

    Jet Propulsion Laboratory, United States

    2 publications · 47 citations

    2

    h-index

  2. JT
    Javier Tiffenberg

    Fermi National Accelerator Laboratory, United States

    2 publications · 325 citations

    2

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  3. DK
    Daniel Kavaldjiev

    Rochester Institute of Technology, United States

    2 publications · 79 citations

    2

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  4. WC
    William C. Scarfe

    University of Louisville, United States

    1 publications · 14 citations

    1

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  5. JE
    J. E. Carnes

    RCA (United States), United States

    1 publications · 13 citations

    1

    h-index

1–5 of 248

Venues

  1. Optical Engineering

    5 publications · 158 citations

    5

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  2. Review of Scientific Instruments

    4 publications · 49 citations

    4

    h-index

  3. Applied Physics Letters

    4 publications · 94 citations

    4

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  4. IEEE Transactions on Electron Devices

    3 publications · 40 citations

    3

    h-index

  5. 2

    h-index

1–5