Charge-coupled Device Sensitivity
Charge-Coupled Device Sensitivity is a metric that quantifies the efficiency of a charge-coupled device in converting incident photons into electronic charge, distinguishing it from other image receptor sensitivity metrics by its specific dependence on quantum efficiency, charge transfer efficiency, and noise characteristics inherent to CCD architecture.
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2017–2026
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Real-Time Imaging of Quantum Entanglement
Robert Fickler, Mario Krenn, Radek Łapkiewicz et al. · Scientific Reports · 2013 · 146 citations · Full text
Natural Sciences, Physics, Optics +16
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Massachusetts Institute of Technology
Cambridge, United States
4 h-index
18 publications
336 citations
California Institute of Technology
Pasadena, United States
4 h-index
12 publications
319 citations
Rochester Institute of Technology
Rochester, United States
3 h-index
3 publications
111 citations
Bariloche Atomic Centre
Bariloche, Argentina
2 h-index
2 publications
325 citations

Lawrence Berkeley National Laboratory
Berkeley, United States
2 h-index
2 publications
290 citations

Fermi National Accelerator Laboratory
Batavia, United States
2 h-index
12 publications
1.5K citations
MIT Lincoln Laboratory
Lexington, United States
2 h-index
13 publications
155 citations
Kodak (United States)
Rochester, United States
2 h-index
16 publications
291 citations
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5 publications · 158 citations
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4 publications · 49 citations
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4 publications · 94 citations
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