Accumulation Regimes

Accumulation Regime is a fundamental operational state of a MOS capacitor in which majority carriers are attracted to the semiconductor-insulator interface under an applied electric field, forming a conductive layer of accumulated charge that enhances surface conductivity without inverting the semiconductor type.

30

Publications

1.1K

Citations

72

Authors

41

Institutions

Publications per year

2017–2026

7

Authors

72

  1. AR
    Andrew Ruddell

    Australian Antarctic Division, Australia

    2 publications · 45 citations

    2

    h-index

  2. IA
    Ian Allison

    Australian Antarctic Division, Australia

    2 publications · 45 citations

    2

    h-index

  3. MH
    Martin Higham

    Australian Antarctic Division, Australia

    2 publications · 45 citations

    2

    h-index

  4. AV
    Albert V. Davydov

    National Institute of Standards and Technology, United States

    1 publications · 32 citations

    1

    h-index

  5. GH
    Graham Haughton

    University of Manchester, United Kingdom

    1 publications · 22 citations

    1

    h-index

1–5 of 72

Venues

  1. IEEE Transactions on Electron Devices

    3 publications · 52 citations

    3

    h-index

  2. Annals of Glaciology

    2 publications · 45 citations

    2

    h-index

  3. Capital & Class

    2 publications · 136 citations

    2

    h-index

  4. Review of Political Economy

    1 publications · 16 citations

    1

    h-index

  5. Environment and Planning A Economy and Space

    1 publications · 22 citations

    1

    h-index

1–5