H. Hasegawa

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Shoji Ikeda, Jun Hayakawa, Yoshito Ashizawa et al. · Applied Physics Letters · 2008 · 1.5K citations

Magnetic Properties, Engineering, Magnetic Resonance +20

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda et al. · Applied Physics Express · 2008 · 343 citations

Non-volatile Memory, Engineering, Vlsi Design +18

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, Shoji Ikeda, J. H. Park et al. · Applied Physics Letters · 2009 · 137 citations · Full text

Magnetic Properties, Engineering, Tmr Ratio +16

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

R. Takemura, T. Kawahara, K. Miura et al. · IEEE Journal of Solid-State Circuits · 2010 · 125 citations

Non-volatile Memory, Engineering, Memory Design +21

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

Shoun Matsunaga, Kimiyuki Hiyama, Atsushi Matsumoto et al. · Applied Physics Express · 2009 · 84 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20