Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

Shoji Ikeda, Jun Hayakawa, Yoshito Ashizawa, +6

Applied Physics Letters

Magnetic PropertiesEngineeringMagnetic ResonanceTunnel MagnetoresistanceSpintronic Material +18

Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, +5

Applied Physics Express

Non-volatile MemoryEngineeringVlsi DesignNonvolatile Memory ElementsEmerging Memory Technology +16

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, Shoji Ikeda, J. H. Park, +7

Applied Physics Letters

Magnetic PropertiesEngineeringTmr RatioTunnel MagnetoresistanceMagnetic Materials +14

A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme

R. Takemura, T. Kawahara, K. Miura, +11

IEEE Journal of Solid-State Circuits

Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer Architecture +19

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

Shoun Matsunaga, Kimiyuki Hiyama, Atsushi Matsumoto, +7

Applied Physics Express

Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access Memory3D Memory +18

0.1- mu m gate-length superconducting FET

T. Nishino, Mutsuko Hatano, H. Hasegawa, +5

IEEE Electron Device Letters

Semiconductor TechnologySuperconducting MaterialElectrical EngineeringElectronic DevicesOxide-insulated Gate Electrode +10

Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions

Huadong Gan, Shoji Ikeda, W. Shiga, +8

Applied Physics Letters

Tunnel Magnetoresistance PropertiesMagnetic PropertiesEngineeringTunnel MagnetoresistanceMagnetic Materials +16

Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array

Daisuke Suzuki, Masanori Natsui, Shoji Ikeda, +6

Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyComputer Architecture +20

Electrical properties of Au/Nb-doped-SrTiO3 contact

H. Hasegawa, Toshikazu Nishino

Journal of Applied Physics

Materials EngineeringMaterials ScienceSemiconductorsElectrical EngineeringEngineering +13

Broad band software-defined radio receivers based on superconductive devices

Akira Fujimaki, K. Nakazono, H. Hasegawa, +6

IEEE Transactions on Applied Superconductivity

Future Sdr ReceiverEngineeringAnalog-to-digital ConverterSuperconductive DevicesAntenna +8