Toshiaki Ikoma - Concepedia

Author

Toshiaki Ikoma

Tokyo University of Science

Also Known As

TOSHIAKI IKOMA, Toshiaki IKOMA, Toshiaki Ikoma, Toshiaki Ikoma Toshiaki Ikoma

Publications

Citations

H-Index

Concepts

All Affiliations

Tokyo University of Science The University of Tokyo Advanced Institute of Industrial Technology University of Electro-Communications

About

Toshiaki Ikoma is an author at Tokyo University of Science specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	28	831
2	Applied Physics	18	30	888
3	Natural Sciences	5	5	101
4	Public Health	1	1	20
5	Biostatistics	1	1	20

Toshiaki Ikoma

Publications

908

Citations

H-Index

Page 1

	Year	Citations
Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation Toshiro Hiramoto, Kazuhiko Hirakawa, Yasuhiro Iye, Applied Physics Letters Categoryquantum ElectronicsEngineeringElectron-beam LithographyElectron WavesPhase Coherence Length	1989	93
Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopy Teruaki Katsube, Koichi Kakimoto, Toshiaki Ikoma Journal of Applied Physics Electrical EngineeringSemiconductor DeviceSi Metal-oxide-semiconductor DiodesEngineeringPhysics	1981	76
One-dimensional GaAs wires fabricated by focused ion beam implantation Toshiro Hiramoto, Kazuhiko Hirakawa, Yasuhiro Iye, Applied Physics Letters Electrical EngineeringIon ImplantationGaas WiresGaas WirePhysics	1987	56
Deep levels in gallium arsenide by capacitance methods Kazuo Sakai, Toshiaki Ikoma Applied Physics A Applied PhysicsDeep LevelsSemiconductor Device	1974	54
Identification of the “EL2 Family” Midgap Levels in GaAs Toshiaki Ikoma, Yasunori Mochizuki Japanese Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorElectrical EngineeringIi-vi SemiconductorEngineering	1985	50
Impact excitation of the erbium-related 1.54 μm luminescence peak in erbium-doped InP Hideo Isshiki, Hitoshi Kobayashi, Shigemi Yugo, Applied Physics Letters Erbium-related 1.54Optical MaterialsEngineeringμM Luminescence PeakOptoelectronic Devices	1991	45
Fabrication of one-dimensional GaAs wires by focused ion beam implantation Toshiro Hiramoto, Kazuhiko Hirakawa, Toshiaki Ikoma Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringOptoelectronic DevicesIntegrated CircuitsSemiconductor DeviceSemiconductors	1988	45
Properties of Deep Levels in ZnO Varistors and Their Effect on Current-Response Characteristics A. Nitayama, H. Sakaki, Toshiaki Ikoma Japanese Journal of Applied Physics Electrical EngineeringCurrent-response CharacteristicsDeep LevelsEngineeringPhysics	1980	43
Deep levels in MOCVD GaAs grown under different Ga/As mol fractions He-Zhong Zhu, Yoshio Adachi, Toshiaki Ikoma Journal of Crystal Growth Semiconductor TechnologyElectrical EngineeringDeep LevelsEngineeringApplied Physics	1981	36
Optical Recovery of Photoquenching at the Midgap Electron Traps (EL2 Family) in GaAs Yasunori Mochizuki, Toshiaki Ikoma Japanese Journal of Applied Physics Optical MaterialsEngineeringElectronic StructureElectron OpticSemiconductors	1985	34

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