One-dimensional GaAs wires fabricated by focused ion beam implantation

Abstract

We have developed a novel, simple technique for fabrication of one-dimensional GaAs wires by utilizing only a focused ion beam (FIB) technology. The FIB implantation forms high-resistive regions which confine an n+ channel into a very narrow conductive wire. The minimum width of the GaAs wire fabricated by the present technology is 20 nm. Magnetoconductance of the wires shows a behavior of one-dimensional localization and a conductance fluctuation due to a quantum interference effect. This is the first observation of the quantum interference effect in GaAs wires fabricated only by FIB implantation. Measured magnetoconductances are compared with the existing theories.