Ji-Chel Bea

Evaluation of Cu Diffusion From Cu Through-Silicon Via (TSV) in Three-Dimensional LSI by Transient Capacitance Measurement

Ji-Chel Bea, Kangwook Lee, Takafumi Fukushima et al. · IEEE Electron Device Letters · 2011 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Evaluation of Cu Contamination at Backside Surface of Thinned Wafer in 3-D Integration by Transient-Capacitance Measurement

Ji-Chel Bea, Kangwook Lee, Takafumi Fukushima et al. · IEEE Electron Device Letters · 2010 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

Oxide-Oxide Thermocompression Direct Bonding Technologies with Capillary Self-Assembly for Multichip-to-Wafer Heterogeneous 3D System Integration

Takafumi Fukushima, H. Hashiguchi, Hiroshi Yonekura et al. · Micromachines · 2016 · 32 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Self-Assembly of Chip-Size Components with Cavity Structures: High-Precision Alignment and Direct Bonding without Thermal Compression for Hetero Integration

Takafumi Fukushima, Takayuki Konno, Eiji Iwata et al. · Micromachines · 2011 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of Cu diffusion from Cu through-silicon via (TSV) on device reliability in 3-D LSIs evaluated by transient capacitance measurement

Kangwook Lee, Ji-Chel Bea, Yuki Ohara et al. · 2012 · 19 citations

Engineering, Electrical Engineering, Materials Science +17