Toru Toyabe

Origin of characteristics differences between top and bottom contact organic thin film transistors

Yoshinori Ishikawa, Yasuo Wada, Toru Toyabe · Journal of Applied Physics · 2010 · 51 citations

Engineering, Organic Electronics, Otft Devices Simulator +16

Molecular doping effect in bottom-gate, bottom-contact pentacene thin-film transistors

Yusuke Wakatsuki, Kei Noda, Yasuo Wada et al. · Journal of Applied Physics · 2011 · 27 citations

Electrical Engineering, Thin-film Transistor, Engineering +11

Characterization of Trap States at Silicon-On-Insulator (SOI)/Buried Oxide (BOX) Interface by Back Gate Transconductance Characteristics in SOI MOSFETs

Yoshikata Nakajima, Hideki Tomita, Kenichi Aoto et al. · Japanese Journal of Applied Physics · 2003 · 24 citations

Experimental Transconductance, Engineering, Integrated Circuits +16

Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Michitaka Yoshino, Yuto Ando, Manato Deki et al. · Materials · 2019 · 24 citations · Full text

Characterization of Distribution of Trap States in Silicon-on-Insulator Layers by Front-Gate Characteristics in n-Channel SOI MOSFETs

Kenji Kajiwara, Yoshikata Nakajima, Tatsuro Hanajiri et al. · IEEE Transactions on Electron Devices · 2008 · 19 citations

Electrical Engineering, Epitaxial Layer Transfer, N-channel Soi Mosfets +13