Jean‐Pierre Faurie

High-Quality 2'' Bulk-Like Free-Standing GaN Grown by HydrideVapour Phase Epitaxy on a Si-doped Metal Organic Vapour Phase Epitaxial GaN Template with an Ultra Low Dislocation Density

D. Gogova, Henrik Larsson, A. Kasic et al. · Japanese Journal of Applied Physics · 2005 · 51 citations

Engineering, Materials Engineering, Materials Science +17

Molecular beam epitaxy of Hg1−xCdxTe: Growth and characterization

Jean‐Pierre Faurie · Progress in Crystal Growth and Characterization of Materials · 1994 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +10

Developments and trends in MBE of II–VI Hg-based compounds

Jean‐Pierre Faurie · Journal of Crystal Growth · 1987 · 24 citations

Natural Sciences, Chemistry, Materials Science +8

Current status of the growth of HgCdTe by molecular beam epitaxy on (211)B CdZnTe substrates

Jean‐Pierre Faurie, S. Sivananthan, P. S. Wijewarnasuriya · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1992 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +14

HgTe–CdTe heterojunction valence-band discontinuity

Jean‐Pierre Faurie, Ching-Hao Hsu, Trần Minh Đức · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1987 · 16 citations

Natural Sciences, Materials Science, Physics +17