Concepedia

Satoru Ohshima

SO

Statistics

Publications

6

Citations

79

H-Index

6

Active since

2001

Affiliations

Kyoto Institute of Technology(Current)

Dong-Eui University

Satoru Ohshima is an author at Kyoto Institute of Technology specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceMaterials EngineeringMicrostructureSurface ScienceCrystalline DefectsThin FilmsNanoelectronicsMicroelectronics

Publications per year

2001–2005

6

Publications

6

Bulk crystal growth of cubic silicon carbide by sublimation epitaxy

Tomoaki Furusho, M. Sasaki, Satoru Ohshima et al. · Journal of Crystal Growth · 2003 · 18 citations

Materials Science, Engineering, Crystal Growth Technology +7

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

Mitsutaka Nakamura, Toshiyuki Isshiki, Taro Nishiguchi et al. · Materials science forum · 2005 · 14 citations

Engineering, Growth Model, Silicon On Insulator +19

Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique

Tomoaki Furusho Krastev Lilov, Satoru Ohshima, Shigehiro Nishino · Japanese Journal of Applied Physics · 2001 · 13 citations

Materials Engineering, Materials Science, Engineering +13

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate

Taro Nishiguchi, Mitsutaka Nakamura, Koji Nishio et al. · Materials science forum · 2005 · 12 citations

Materials Science, Materials Engineering, Si Substrate +14

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

Taro Nishiguchi, Yoshihiko Mukai, Mitsutaka Nakamura et al. · Materials science forum · 2004 · 12 citations · Full text

Materials Engineering, Materials Science, Engineering +8

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