M. Wintrebert‐Fouquet

Author

Also Known As

M Wintrebert-Fouquet, M. WINTREBERT-FOUQUET, M. Wintrebert-Fouquet, M. Wintrebert‐Fouquet, Marie Wintrebert-Fouquet, Marie Wintrebert‐Fouquet, Wintrebert-Fouquet, M.

Publications

547

Citations

H-Index

Concepts

All Affiliations

Macquarie University Australian Defence Force Academy UNSW Sydney Australian National University Australian Nuclear Science and Technology Organisation

About

M. Wintrebert‐Fouquet is an author at Macquarie University specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	14	17	446
2	Engineering	11	12	329
3	Chemistry	5	5	189
4	Natural Sciences	4	4	178
5	Chemical Engineering	1	1	14

M. Wintrebert‐Fouquet

Publications

499

Citations

H-Index

Page 1

	Year	Citations
Nitrogen-rich indium nitride Kenneth Butcher, M. Wintrebert‐Fouquet, P. P.‐T. Chen, Journal of Applied Physics Materials ScienceMaterials EngineeringUltraviolet RamanEngineeringPhysics	2004	70
The nature of nitrogen related point defects in common forms of InN K.S.A. Butcher, Alanna Fernandes, P. P.‐T. Chen, Journal of Applied Physics Materials SciencePoint DefectPoint DefectsEngineeringCrystalline Defects	2007	61
A luminescence study of porous diatoms Kenneth Butcher, J. M. Ferris, Matthew R. Phillips, Materials Science and Engineering C Pore StructureMicroscopyNatural SciencesSpectroscopyLuminescence Study	2005	53
A Raman spectroscopy study of InN Martin Kuball, James W. Pomeroy, M. Wintrebert‐Fouquet, Journal of Crystal Growth Raman Spectroscopy StudySpectroscopyApplied PhysicsSpectroscopic PropertySpectroscopic Method	2004	42
Stoichiometry effects and the Moss–Burstein effect for InN Kenneth Butcher, H. Hirshy, R. M. Perks, physica status solidi (a) EngineeringChemistrySemiconductorsEv Absorption EdgeMossbauer Spectroscopy	2006	40
Absorption and photoluminescence features caused by defects in InN Dimiter Alexandrov, K.S.A. Butcher, M. Wintrebert‐Fouquet Journal of Crystal Growth PhotoluminescenceEngineeringApplied PhysicsDefect FormationPhotoluminescence Features	2004	31
Non‐stoichiometry and non‐homogeneity in InN Kirsten M. Scott, Amy Butcher, M. Wintrebert‐Fouquet, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials ScienceCoexistenceEngineeringPhysicsSurface Science	2005	26
Apparent band-gap shift in InN films grown by remote-plasma-enhanced CVD Patrick P.–T. Chen, Kenneth Butcher, M. Wintrebert‐Fouquet, Journal of Crystal Growth PhysicsInn FilmsApplied PhysicsChemical Vapor DepositionPlasma Processing	2006	24
Detailed analysis of absorption data for indium nitride K.S.A. Butcher, M. Wintrebert‐Fouquet, P.P.-T. Chen, Materials Science in Semiconductor Processing Aluminium NitrideSpectroscopyApplied PhysicsAtomic AbsorptionAbsorption Data	2003	22
Reliable ERD analysis of group-III nitrides despite severe nitrogen depletion Santosh Shrestha, K.S.A. Butcher, M. Wintrebert‐Fouquet, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Cubic Boron NitrideApplied PhysicsChemistryReliable Erd Analysis	2004	16

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