Masatake Katayama

Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity

Hiroshi Yamagishi, I. Fusegawa, N. Fujimaki et al. · Semiconductor Science and Technology · 1992 · 168 citations

Point Defects, Engineering, Gate Oxide Integrity +16

Model on transport phenomena and epitaxial growth of silicon thin film in SiHCl3H2 system under atmospheric pressure

Hitoshi Habuka, Takatoshi Nagoya, Masanori Mayusumi et al. · Journal of Crystal Growth · 1996 · 103 citations

MEMS-based integrated head/actuator/slider for hard disk drives

Takahiro Imamura, Masatake Katayama, Y. Ikegawa et al. · IEEE/ASME Transactions on Mechatronics · 1998 · 57 citations

Engineering, Mechanical Engineering, Microactuator +16

Initial stage of oxidation of hydrogen-terminated silicon surfaces

Takeo Hattori, Takeshi Aiba, Etsuo Iijima et al. · Applied Surface Science · 1996 · 50 citations

Initial Stage, Engineering, Surface Analysis +4

Initial Stage of Oxidation of Hydrogen-Terminated Si(100)-2×1 Surface

Takeshi Aiba, Ken Yamauchi, Naoto Tate et al. · Japanese Journal of Applied Physics · 1995 · 46 citations

Materials Science, Sio 2, Initial Stage +12