H. V. Savytskyy

Defect structure of HgCdTe films grown by molecular beam epitaxy on Si substrates

A. I. Izhnin, H. V. Savytskyy, M. Vakiv et al. · Semiconductor Science and Technology · 2012 · 23 citations

Materials Science, Electrical Engineering, Residual Donors +14

Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

A.V. Voitsekhovsky, A. G. Korotaev, O. I. Fitsych et al. · Infrared Physics & Technology · 2016 · 23 citations

Semiconductors, Materials Science, Electrical Engineering +13

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

K. D. Mynbaev, A.V. Voitsekhovsky, A. G. Korotaev et al. · Infrared Physics & Technology · 2019 · 17 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +8

Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

O. Yu. Bonchyk, H. V. Savytskyy, Z. Świątek et al. · Applied Nanoscience · 2018 · 14 citations

Materials Science, Nano-size Defects, Engineering +4