A.V. Voitsekhovsky

Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates

A.V. Voitsekhovsky, A. G. Korotaev, O. I. Fitsych et al. · Infrared Physics & Technology · 2016 · 23 citations

Semiconductors, Materials Science, Electrical Engineering +13

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

K. D. Mynbaev, A.V. Voitsekhovsky, A. G. Korotaev et al. · Infrared Physics & Technology · 2019 · 17 citations

Ii-vi Semiconductor, Electrical Engineering, Engineering +8

Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis

I.I. Syvorotka, O. I. Fitsych, S. A. Dvoretsky et al. · Semiconductor Science and Technology · 2019 · 11 citations

Photoluminescence of HgCdTe nanostructures grown by molecular beam epitaxy on GaAs

A. I. Izhnin, K. D. Mynbaev, N. L. Bazhenov et al. · Opto-Electronics Review · 2013 · 10 citations · Full text

Engineering, Alloy Disorder, Hgcdte Nanostructures +17