M. Amano

Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi, H. Yoda, Tadashi Kai et al. · 2008 · 219 citations

Magnetic Properties, Engineering, Spintronic Material +22

Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques

Kazutaka Ikegami, Hiroshi Noguchi, C. Kamata et al. · 2014 · 28 citations

Low Power, Non-volatile Memory, Electrical Engineering +13

Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir–Mn exchange-biased double tunnel junctions

Y. Saito, M. Amano, K. Nakajima et al. · Journal of Magnetism and Magnetic Materials · 2001 · 26 citations

Magnetism, Electrical Engineering, Engineering +10

Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM

S Takahashi, N. Shimomura, Tetsuzo Ueda et al. · IEEE Transactions on Magnetics · 2006 · 26 citations

Non-volatile Memory, Engineering, Mtj Cells +17

Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs

Masayuki Yoshikawa, Tetsuya Kai, M. Amano et al. · Journal of Applied Physics · 2005 · 22 citations

Bit Yield Improvement, Non-volatile Memory, Engineering +17