Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

T. Kishi, H. Yoda, Tadashi Kai, +19

Magnetic PropertiesEngineeringSpintronic MaterialSpin DynamicMagnetic Materials +20

Low power and high density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques

Kazutaka Ikegami, Hiroshi Noguchi, C. Kamata, +13

Low PowerNon-volatile MemoryElectrical EngineeringEngineeringCircuit Design +11

Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir–Mn exchange-biased double tunnel junctions

Y. Saito, M. Amano, K. Nakajima, +2

Journal of Magnetism and Magnetic Materials

MagnetismElectrical EngineeringEngineeringTunneling MicroscopyPhysics +8

Ion-Beam-Etched Profile Control of MTJ Cells for Improving the Switching Characteristics of High-Density MRAM

S Takahashi, N. Shimomura, Tetsuzo Ueda, +10

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringMtj CellsHigh-density MramPhase Change Memory +15

Bit yield improvement by precise control of stray fields from SAF pinned layers for high-density MRAMs

Masayuki Yoshikawa, Tetsuya Kai, M. Amano, +16

Journal of Applied Physics

Bit Yield ImprovementNon-volatile MemoryEngineeringWrite-operating WindowEmerging Memory Technology +15

Ion-beam-etched profile control of MTJ cells for improving the switching characteristics of high-density MRAM

S Takahashi, N. Shimomura, Tetsuzo Ueda, +10

Non-volatile MemoryEngineeringMtj CellsHigh-density MramPhase Change Memory +15

The progresses of MRAM as a memory to save energy consumption and its potential for further reduction

H. Yoda, E. Kitagawa, N. Shimomura, +2

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureSocial Sciences +19

Reduction of switching field distributions by edge oxidization of submicron magnetoresistive tunneling junction cells for high-density magnetoresistive random access memories

Masayuki Yoshikawa, E. Kitagawa, S Takahashi, +12

Journal of Applied Physics

Non-volatile MemoryEdge Magnetization ReversalsEngineeringMagnetization ReversalsMagnetic Resonance +21

Effect of bias voltage and interdiffusion in Ir-Mn exchange-biased double tunnel junctions

Y. Saito, M. Amano, K. Nakajima, +3

IEEE Transactions on Magnetics

Magnetic PropertiesEngineeringMagnetic ResonanceSpintronic MaterialMagnetic Materials +23

A 4ns, 0.9V write voltage embedded perpendicular STT-MRAM fabricated by MTJ-Last process

Kazutaka Ikegami, Hiroshi Noguchi, C. Kamata, +10