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Bias voltage and annealing-temperature dependences of magnetoresistance ratio in Ir–Mn exchange-biased double tunnel junctions

MagnetismElectrical EngineeringEngineeringTunneling MicroscopyPhysicsNatural SciencesCondensed Matter PhysicsApplied PhysicsMagnetoresistance RatioBias VoltageMagnetic MaterialsMagnetoresistanceAnnealing-temperature Dependences