7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture

Hiroki Noguchi, Kazutaka Ikegami, K. Kushida, +8

Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer Architecture +18

Impact of ultra low power and fast write operation of advanced perpendicular MTJ on power reduction for high-performance mobile CPU

E. Kitagawa, Shinobu Fujita, Kumiko Nomura, +10

Non-volatile MemoryEngineeringVlsi DesignComputer ArchitectureMulti-channel Memory Architecture +16

Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density

H. Yoda, N. Shimomura, Y. Ohsawa, +13

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +18

7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme

Hiroki Noguchi, Kazutaka Ikegami, Satoshi Takaya, +10

Non-volatile MemoryElectrical EngineeringEngineeringPerformance GapsStt-mram-based Cache +10

Highly reliable and low-power nonvolatile cache memory with advanced perpendicular STT-MRAM for high-performance CPU

Hiroki Noguchi, Kazutaka Ikegami, Naoharu Shimomura, +3

Hardware SecurityLast Level CacheElectrical EngineeringNon-volatile MemoryEngineering +9

A 250-MHz 256b-I/O 1-Mb STT-MRAM with advanced perpendicular MTJ based dual cell for nonvolatile magnetic caches to reduce active power of processors

Hiroki Noguchi, K. Kushida, Kazutaka Ikegami, +7

MagnetismElectrical EngineeringNon-volatile MemoryNovel 1MbEngineering +11

1200μm² Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

Mari Matsumoto, Shinichi Yasuda, Ryuji Ohba, +3

Low-power ElectronicsHardware SecurityElectrical EngineeringAmplifier AreaSingle Amplifier +9

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height

T. Inokuchi, H. Yoda, Yushi Kato, +14

Applied Physics Letters

Spin TorqueMagnetic PropertiesNon-volatile MemoryEngineeringHybrid Writing Scheme +24

Voltage-Control Spintronics Memory With a Self-Aligned Heavy-Metal Electrode

S. Shirotori, H. Yoda, Y. Ohsawa, +14

IEEE Transactions on Magnetics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceMagnetic Materials +16

Giant voltage-controlled magnetic anisotropy effect in a crystallographically strained CoFe system

Yushi Kato, H. Yoda, Y. Saito, +15

Applied Physics Express

Magnetic PropertiesEngineeringCofe SystemMagnetic ResonanceGiant Vcma Coefficients +14