Yi-Jen Chan

Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication

Wenkai Wang, Po‐Chen Lin, Ching-Huao Lin et al. · IEEE Electron Device Letters · 2004 · 39 citations

Undoped Algan Layer, Wide-bandgap Semiconductor, Electrical Engineering +12

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0≤x≤0.25) doped-channel field-effect transistors (DCFET's)

Yi-Jen Chan, Ming‐Ta Yang · IEEE Transactions on Electron Devices · 1995 · 37 citations

Doped-channel Field-effect Transistors, Strained Channel, Electrical Engineering +10

Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model

Yi-Jen Chan, Chia‐Hung Huang, Chung-Chian Weng et al. · IEEE Transactions on Microwave Theory and Techniques · 1998 · 36 citations

Device Modeling, Electrical Engineering, Deep-submicrometer Mosfet +9

AlGaAs/InGaAs heterostructure doped-channel FET's exhibiting good electrical performance at high temperatures

Hsien‐Chin Chiu, Shih-Cheng Yang, Yi-Jen Chan · IEEE Transactions on Electron Devices · 2001 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Influence of thin metal base thickness on the performance of CuPc vertical organic triodes

Shiau-Shin Cheng, Chuan-Yi Yang, You‐Che Chuang et al. · Applied Physics Letters · 2007 · 18 citations

Engineering, Organic Electronics, Optoelectronic Devices +20