Y. G. Wey

Room temperature 0.1 μm CMOS technology with 11.8 ps gate delay

K.F. Lee, Ran Yan, Dae‐Young Jeon et al. · 2002 · 54 citations

Low-power Electronics, Room Temperature, Electrical Engineering +13

Ultrafast graded double-heterostructure GaInAs/InP photodiode

Y. G. Wey, D. L. Crawford, K. Giboney et al. · Applied Physics Letters · 1991 · 43 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +20

Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode

Y.M. Zhang, V. Borzenets, N. Dubash et al. · Journal of Lightwave Technology · 1997 · 19 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

Microwave and millimeter wave signal generation using mode-locked semiconductor lasers with intra-waveguide saturable absorbers

Dennis Derickson, Roger Helkey, A. Már et al. · 2003 · 17 citations

Engineering, Laser Science, Oscillators +17

High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

D. L. Crawford, Y. G. Wey, A. Már et al. · IEEE Photonics Technology Letters · 1990 · 17 citations

Optical Materials, Impulse Response, Engineering +19