Applied Physics Letters · 1991 · 43 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsPhotodetectorsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsDouble Heterostructure DevicesDouble HeterostructuresElectro-optic SamplingImpulse ResponseMolecular Beam EpitaxyP-i-n PhotodetectorsPhotodetectionPhotodiodes
Ultrafast graded double-heterostructure GaInAs/InP p-i-n photodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi-insulating substrate. The graded band-gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5 μm×5 μm device was measured by electro-optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.
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100 GHz bandwidth planar GaAs Schottky photodiode
Shih-Yuan Wang, D. M. Bloom · Electronics Letters · 1983 · 104 citations
110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs
David G. Parker, P.G. Say, A.M. Hansom et al. · Electronics Letters · 1987 · 54 citations
Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode
R.S. Tucker, A. Taylor, C.A. Burrus et al. · Electronics Letters · 1986 · 46 citations
Millimetre-waveguide-mounted InGaAs photodetectors
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