High speed InGaAs/InP p-i-n photodiodes fabricated on a semi-insulating substrate

Abstract

High speed, mass-produced InGaAs-InP p-i-n photodiodes have been fabricated on a semi-insulating substrate. The FWHM (full width at half maximum) impulse response of a 25- mu m/sup 2/ device has been measured to be under 16 ps, entirely limited by the measurement system. The high speed of this structure was achieved by scaling the area down to 25 mu m/sup 2/ and the intrinsic layer thickness down to 0.3 mu m. Further scaling of this structure is possible, and bandwidths in excess of 200 GHz should be achievable. This structure is also useful for integration with bias tees, matching networks, and optical and electronic preamplifiers.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>