S.M. Wang

Nitride-based LEDs with p-InGaN capping layer

Shoou‐Jinn Chang, C.H. Chen, P. C. Chang et al. · IEEE Transactions on Electron Devices · 2003 · 57 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

Ivar Tångring, S.M. Wang, M. Sadeghi et al. · Journal of Crystal Growth · 2007 · 32 citations

Photonics, Engineering, Physics +9

10 Gbit/s modulation of 1.3 µm GaInNAs lasers up to 110°C

Johan Gustavsson, Y.Q. Wei, M. Sadeghi et al. · Electronics Letters · 2006 · 32 citations

Very low threshold current density 1.3μm GaInNAs single-quantum well lasers grown by molecular beam epitaxy

S.M. Wang, Y.Q. Wei, X.D. Wang et al. · Journal of Crystal Growth · 2005 · 31 citations

Optical Pumping, Photonics, Engineering +6

High-quality 1.3 µm GaInNAs single quantum well lasers grown by MBE

X.D. Wang, S.M. Wang, Y.Q. Wei et al. · Electronics Letters · 2004 · 22 citations