P. C. Chang

Nitride-based LEDs with p-InGaN capping layer

Shoou‐Jinn Chang, C.H. Chen, P. C. Chang et al. · IEEE Transactions on Electron Devices · 2003 · 57 citations

Engineering, Electrical Engineering, Materials Science +15

GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg$_{\rm x}$N$_{\rm y}$–GaN Buffer Layer

Shoou‐Jinn Chang, K. H. Lee, P. C. Chang et al. · IEEE Journal of Quantum Electronics · 2008 · 39 citations

Engineering, Electrical Engineering, Materials Science +15

Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou, C.H. Chen, Ricky W. Chuang et al. · Solid-State Electronics · 2005 · 38 citations

Engineering, Electrical Engineering, Materials Science +14

Low-Noise and High-Detectivity GaN UV Photodiodes With a Low-Temperature AlN Cap Layer

P. C. Chang, Chun Yu, S.J. Chang et al. · IEEE Sensors Journal · 2007 · 25 citations

Engineering, Electrical Engineering, Materials Science +15

Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts

Yan‐Kuin Su, P. C. Chang, C. H. Chen et al. · Solid-State Electronics · 2005 · 23 citations

Engineering, Materials Engineering, Materials Science +13