Y. D. Jhou

Nitride-based LEDs with p-InGaN capping layer

Shoou‐Jinn Chang, C.H. Chen, P. C. Chang et al. · IEEE Transactions on Electron Devices · 2003 · 57 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures

Y. D. Jhou, C.H. Chen, Ricky W. Chuang et al. · Solid-State Electronics · 2005 · 37 citations

Photonics, Electrical Engineering, Solid-state Lighting +9

GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer

Y. D. Jhou, S. J. Chang, Yan Su et al. · Applied Physics Letters · 2007 · 21 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

GaN-Based MSM Photodetectors Prepared on Patterned Sapphire Substrates

Shoou‐Jinn Chang, Y. D. Jhou, Yun-Hsuan Lin et al. · IEEE Photonics Technology Letters · 2008 · 19 citations

InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO₂ Layers

Ping-Chuan Chang, Chin-Hsiang Chen, Shoou-Jinn Chang et al. · Japanese Journal of Applied Physics · 2004 · 13 citations

Semiconductors, Photonics, Electrical Engineering +15