Concepedia

C. Dubois

CD

20

Publications

703

Citations

16

H-Index

1995

Active since

Affiliations

Centre National de la Recherche Scientifique(Current)

Institut National des Sciences Appliquées de Lyon

Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Institut des Nanotechnologies de Lyon

Université Claude Bernard Lyon 1

C. Dubois is an author at Centre National de la Recherche Scientifique specializing in applied physics, engineering, and materials science.

Top concepts

Publications per year

1995–2014

20

Publications

20

Surface recombination velocity of highly doped <i>n</i>-type silicon

Andrés Cuevas, Paul A. Basore, G. Giroult-Matlakowski et al. · Journal of Applied Physics · 1996 · 215 citations

, , +14

High quality Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jing Mi, P. Warren, P. Letourneau et al. · Applied Physics Letters · 1995 · 80 citations

, , +10

Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

A. Cuevas, G. Giroult-Matlakowski, P.A. Basore et al. · 2002 · 42 citations

, , +13

Highly doped Si and Ge formed by GILD (gas immersion laser doping); from GILD to superconducting silicon

D. Cammilleri, Frédéric Fossard, D. Débarre et al. · Thin Solid Films · 2008 · 41 citations

, , +6

Structural properties of undoped and doped cubic GaN grown on SiC(001)

E. Martinez‐Guerrero, E. Bellet‐Amalric, L. Martinet et al. · Journal of Applied Physics · 2002 · 39 citations · Full text

, , +14

Rows per page

1–5 of 20