High quality Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jing Mi, P. Warren, P. Letourneau, +5

Applied Physics Letters

SemiconductorsMaterials ScienceMaterials EngineeringEngineeringCrystalline Defects +8

Thermal stability of Si/Si1 − x − yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition

P. Warren, Jian Mi, F. Overney, +1

Journal of Crystal Growth

Materials ScienceEngineeringApplied PhysicsMultilayer HeterostructuresOptoelectronic Devices +3

Low temperature silicon and Si1−xGex epitaxy by rapid themal chemical vapour deposition using hydrides

D. Dutartre, P. Warren, Isabelle Berbézier, +1

Thin Solid Films

Materials ScienceChemical EngineeringLow Temperature SiliconEngineeringSurface Science +7

Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on Si

D. Dutartre, P. Warren, Frederic Chollet, +3

Journal of Crystal Growth

Materials EngineeringMaterials ScienceDefect-free Stranski-krastanov GrowthEngineeringApplied Physics +3

Fabrication of relaxed Si1−<i>x</i>Ge<i>x</i> layers on Si substrates by rapid thermal chemical vapor deposition

D. Dutartre, P. Warren, F. Provenier, +2

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceSemiconductorsMaterials EngineeringDislocation DensitiesEngineering +11

Schottky barrier heights of W on Si1−<i>x</i>Ge<i>x</i> alloys

V. Aubry, F. Meyer, P. Warren, +1

Applied Physics Letters

Semiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineeringBarrier Height +7

Epitaxial growth of Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jian Mi, P. Warren, M. Gailhanou, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Materials ScienceSemiconductorsMaterials EngineeringSi1−x−ygexcy LayersEngineering +13

Comparison of electrodeposited and sputtered intrinsic and aluminium-doped zinc oxide thin films

Jayne Sara Wellings, A.P. Samantilleke, P. Warren, +2

Semiconductor Science and Technology

Electrodeposition of CuInSe2 from ethylene glycol at 150°C

Jayne Sara Wellings, A.P. Samantilleke, S. N. Heavens, +2

Solar Energy Materials and Solar Cells

Ethylene GlycolEngineeringSurface ScienceChemistryElectrode Reaction Mechanism +1

Epitaxy and doping of Si and Si1−<i>x</i>Ge<i>x</i> at low temperature by rapid thermal chemical vapor deposition

D. Dutartre, P. Warren, I. Sagnes, +4

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Materials EngineeringSemiconductorsMaterials ScienceDelta DopingsEngineering +10