P. Warren

High quality Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> epitaxial layers grown on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jing Mi, P. Warren, P. Letourneau et al. · Applied Physics Letters · 1995 · 80 citations

Semiconductors, Materials Science, Materials Engineering +10

Thermal stability of Si/Si1 − x − yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition

P. Warren, Jian Mi, F. Overney et al. · Journal of Crystal Growth · 1995 · 54 citations

Materials Science, Engineering, Applied Physics +5

Low temperature silicon and Si1−xGex epitaxy by rapid themal chemical vapour deposition using hydrides

D. Dutartre, P. Warren, Isabelle Berbézier et al. · Thin Solid Films · 1992 · 47 citations

Materials Science, Chemical Engineering, Low Temperature Silicon +9

Defect-free Stranski-Krastanov growth of strained Si1-xGex layers on Si

D. Dutartre, P. Warren, Frederic Chollet et al. · Journal of Crystal Growth · 1994 · 41 citations

Materials Engineering, Materials Science, Defect-free Stranski-krastanov Growth +5

Fabrication of relaxed Si1−<i>x</i>Ge<i>x</i> layers on Si substrates by rapid thermal chemical vapor deposition

D. Dutartre, P. Warren, F. Provenier et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1994 · 40 citations

Materials Science, Semiconductors, Materials Engineering +13