J. Bąk‐Misiuk

Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies

Z. Liliental-Weber, Mourad Benamara, J. Washburn et al. · Journal of Electronic Materials · 2001 · 37 citations

Natural Sciences, Materials Science, Physics +14

Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions

C. A. Londos, I. V. Antonova, M. Potsidou et al. · Journal of Applied Physics · 2002 · 12 citations

Natural Sciences, Materials Science, Physics +17

Defects in Ge-doped Cz-Si annealed under high stress

A. Misiuk, Deren Yang, B. Surma et al. · Materials Science in Semiconductor Processing · 2006 · 10 citations

Engineering, Materials Science, Physics +14

X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers

Vladimir M. Kaganer, A. Shalimov, J. Bąk‐Misiuk et al. · Applied Physics Letters · 2006 · 10 citations

Natural Sciences, Materials Science, Physics +15

Structural and magnetic properties of nanoclusters in GaMnAs granular layers

K. Ławniczak‐Jabłońska, J. Bąk‐Misiuk, E. Dynowska et al. · Journal of Solid State Chemistry · 2011 · 10 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14