F. Legoues - Concepedia

Author

F. Legoues

IBM Research - Thomas J. Watson Research Center

Also Known As

F. E. LeGoues, F. LeGoues, F. Legoues, Francoise Legoues

Publications

643

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

F. Legoues is an author at IBM Research - Thomas J. Watson Research Center specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	620
2	Applied Physics	9	9	585
3	Chemistry	3	3	278
4	Electrical Engineering	2	2	131
5	Materials Engineering	2	2	84

F. Legoues

Publications

620

Citations

H-Index

Page 1

	Year	Citations
Photoemission spectroscopy study of aluminum–polyimide interface Johann W. Bartha, Peter Hahn, F. Legoues, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceAluminium NitrideEngineeringX-ray Photoemission SpectroscopyPhotoemission Spectroscopy Study	1985	129
Interdiffusion at the polyimide–Cu interface R. M. Tromp, F. Legoues, Paul S. Ho Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceEngineeringDiffusion ResistanceNanomaterialsSurface Science	1985	114
High efficiency and low threshold current strained V-groove quantum-wire lasers Sandip Tiwari, G. D. Pettit, K. R. Milkove, Applied Physics Letters Wide-bandgap SemiconductorOptical MaterialsEngineeringLaser ScienceLaser Applications	1994	97
Radiation effects in thin films of high Tc superconductors G. J. Clark, A. D. Marwick, F. Legoues, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Superconducting MaterialHigh-tc SuperconductivityEngineeringPhysicsHigh-temperature Superconductivity	1988	58
Thermal stability of Si1−<i>x</i>C<i>x</i>/Si strained layer superlattices Mark S. Goorsky, Subramanian S. Iyer, K. Eberl, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsSic PrecipitationApplied Physics	1992	53
High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section tem E. J. van Loenen, Axel Fischer, J. F. van der Veen, Surface Science Materials ScienceMaterials EngineeringIi-vi SemiconductorTransition Metal ChalcogenidesEngineering	1985	43
Stability of strained Si1−<i>y</i>C<i>y</i> random alloy layers Adrian R. Powell, K. Eberl, F. Legoues, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsMaterials EngineeringMaterials ScienceEngineeringDislocation Interaction	1993	41
Chemical Interactions at Metal-Polymer Interfaces Peter Hahn, Gary W. Rubloff, Johann W. Bartha, MRS Proceedings Materials ScienceInterface PropertyInterface ChemistryEngineeringPolymer Science	1984	35
High-quality GaAs on sawtooth-patterned Si substrates K. Ismail, F. Legoues, N.H. Karam, Applied Physics Letters Materials ScienceElectrical EngineeringEpitaxial GrowthEngineeringDislocation Interaction	1991	34
Interdiffusion and precipitation in Al[sbnd]Hf thin-film couples M. Wittmer, Huakun Huang, F. Legoues Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Materials ScienceAluminium NitrideEngineeringGrain GrowthSurface Science	1986	16

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