Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications

Yasuo Kan, H. Nagai, M. Yamanishi, +1

IEEE Journal of Quantum Electronics

Aluminium NitrideQuantum PhotonicsEngineeringOptomechanicsPhoton Energy +16

Characterization of Nitrogen-Doped ZnSe and ZnS_0.06Se_0.94 Films Grown by Metal-Organic Vapor-Phase Epitaxy

I. Suemune, Kouichi Yamada, H. Masato, +3

Japanese Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesChemistrySemiconductor Nanostructures +22

Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxy

Yoshimitsu Tanaka, Yasuhiro Kunitsugu, I. Suemune, +3

Journal of Applied Physics

SemiconductorsElectrical EngineeringElectronic DevicesEngineeringEpitaxial Gaas Film +8

Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room Temperature

Hideo Nagai, Yasuo Kan, Masamichi Yamanishi, +1

Japanese Journal of Applied Physics

Categoryquantum ElectronicsPhotonicsQuantum ScienceQuantum PhotonicsRoom Temperature +12

Transient Response of Photoluminescence for Electric Field in a GaAs/Al_0.7Ga_0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life Time

Masamichi Yamanishi, Y. Usami, Yasuo Kan, +1

Japanese Journal of Applied Physics

SemiconductorsPhotonicsElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Switching of photoluminescence by pulsed electric field in GaAs/Al<inf>0.7</inf>Ga<inf>0.3</inf>As single quantum well structure

Yasuo Kan, M. Yamanishi, Y. Usami, +1

IEEE Journal of Quantum Electronics

SemiconductorsQuantum ScienceElectrical EngineeringPhotonicsEngineering +13

Lattice-Mismatch Enhanced Diffusion at a ZnSe/GaAs Interface - Increase of Thermal Stability in a Lattice-Matching System

Koutoku Ohmi, I. Suemune, Takashi Kanda, +2

Japanese Journal of Applied Physics

EngineeringSemiconductor NanostructuresSemiconductors/Gaas InterfaceIi-vi Semiconductor +17

Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD

I. Suemune, Koutoku Ohmi, Takashi Kanda, +3

Japanese Journal of Applied Physics

EngineeringSemiconductorsIi-vi SemiconductorMolecular Beam EpitaxyEpitaxial Growth +14

Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure

Yasuo Kan, Masamichi Yamanishi, I. Suemune, +2

Japanese Journal of Applied Physics

PhotonicsElectrical EngineeringPhotoluminescenceEngineeringPhysics +8

A 140 ps Optical Pulse Generation by Field-Induced Gain Switching in a Photo-Excited Quantum Well Laser

Tadashi Takeoka, Masamichi Yamanishi, Yasuo Kan, +1

Japanese Journal of Applied Physics

Categoryquantum ElectronicsQuantum PhotonicsEngineeringLaser ScienceLaser Physics +16