Transient Response of Photoluminescence for Electric Field in a GaAs/Al_0.7Ga_0.3As Single Quantum Well: Evidence for Field-Induced Increase in Carrier Life Time

Abstract

Transient photoluminescence measurements for pulsed electric field at room temperature on a GaAs/AlGaAs single quantum well structure have been carried out to clarify the field-dependence of the recombination life time of carriers. The life time increases with the increasing electric field in a marked contrast to the previously reported results. The present results are consistently explained in terms of the field-induced reduction in the overlap between the electron and hole wave functions inside the GaAs well.