L. Grazulis - Concepedia

Author

L. Grazulis

United States Air Force Research Laboratory

Also Known As

L Grazulis, L. Grazulis, Larry Grazulis

Publications

637

Citations

H-Index

Concepts

All Affiliations

United States Air Force Research Laboratory Wright-Patterson Air Force Base University of Dayton Bowling Green State University

About

L. Grazulis is an author at United States Air Force Research Laboratory specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	12	16	486
2	Engineering	11	16	464
3	Health Sciences	1	1	10
4	Natural Sciences	1	1	13
5	Chemical Engineering	1	1	10

L. Grazulis

Publications

496

Citations

H-Index

Page 1

	Year	Citations
Studies of interfacial layers between 4H-SiC (0001) and graphene J.H. Park, W. C. Mitchel, H. E. SMITH, Carbon Materials ScienceInterfacial LayersEngineeringApplied PhysicsGraphene	2009	116
Exploring optimum growth for high quality InAs/GaSb type-II superlattices H. J. Haugan, L. Grazulis, Gail J. Brown, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyApplied Physics	2003	68
Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices H. J. Haugan, Gail J. Brown, L. Grazulis Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Optical MaterialsEngineeringCrystal Growth TechnologySl StrainOptoelectronic Devices	2011	45
Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers Stephen E. Saddow, T. E. Schattner, Jeff L. Brown, Journal of Electronic Materials Materials ScienceSubstrate Surface PreparationEngineering4H-sic Epitaxial LayersSurface Science	2001	42
Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors Frank Szmulowicz, H. J. Haugan, Gail J. Brown, Opto-Electronics Review Wide-bandgap SemiconductorOptical MaterialsThin SuperlatticesEngineeringDesign Tools	2006	36
InAs/GaSb type-II superlattices for high performance mid-infrared detectors H. J. Haugan, Gail J. Brown, Frank Szmulowicz, Journal of Crystal Growth Ii-vi SemiconductorInas/gasb Type-ii SuperlatticesPhysicsInfrared SensorApplied Physics	2005	32
Growth of short-period InAs∕GaSb superlattices H. J. Haugan, K. Mahalingam, Gail J. Brown, Journal of Applied Physics Short Wavelength OpticOptical MaterialsEngineeringOptical TestingShorter-period Sls	2006	29
Role of extended defected SiC interface layer on the growth of epitaxial graphene on SiC J.H. Park, W. C. Mitchel, L. Grazulis, Carbon Materials ScienceGraphene NanomeshesEpitaxial GrapheneEngineeringApplied Physics	2010	19
Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection H. J. Haugan, Gail J. Brown, K. Mahalingam, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena EngineeringCrystal Growth TechnologyInas/gainsb SuperlatticeOptoelectronic DevicesSl Quality	2014	18
Optimization of InAs/GaSb type-II superlattices for high performance of photodetectors H. J. Haugan, Gail J. Brown, L. Grazulis, Physica E Low-dimensional Systems and Nanostructures Ii-vi SemiconductorElectrical EngineeringInas/gasb Type-ii SuperlatticesEngineeringPhysics	2003	14

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