L. Grazulis

Studies of interfacial layers between 4H-SiC (0001) and graphene

J.H. Park, W. C. Mitchel, H. E. SMITH et al. · Carbon · 2009 · 116 citations

Materials Science, Interfacial Layers, Engineering +3

Exploring optimum growth for high quality InAs/GaSb type-II superlattices

H. J. Haugan, L. Grazulis, Gail J. Brown et al. · Journal of Crystal Growth · 2003 · 68 citations

Materials Engineering, Materials Science, Engineering +4

Effect of interfacial formation on the properties of very long wavelength infrared InAs/GaSb superlattices

H. J. Haugan, Gail J. Brown, L. Grazulis · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 45 citations

Optical Materials, Engineering, Crystal Growth Technology +20

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

Stephen E. Saddow, T. E. Schattner, Jeff L. Brown et al. · Journal of Electronic Materials · 2001 · 42 citations

Materials Science, Substrate Surface Preparation, Engineering +8

Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors

Frank Szmulowicz, H. J. Haugan, Gail J. Brown et al. · Opto-Electronics Review · 2006 · 36 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Thin Superlattices +18