L. Bailón

Admittance spectroscopy in junctions

J. Barbolla, S. Dueñas, L. Bailón · Solid-State Electronics · 1992 · 78 citations

Engineering, Tunneling Microscopy, Physics +4

Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon

S. Dueñas, Helena Castán, H. García et al. · Journal of Applied Physics · 2006 · 51 citations

Double Deposition Temperatures, Engineering, Chemical Deposition +19

Improved binary collision approximation ion implant simulators

J.M. Hernández-Mangas, J. Arias, L. Bailón et al. · Journal of Applied Physics · 2002 · 44 citations

Electrical Engineering, Ion Implantation, Engineering +15

Electrical Properties of Atomic-Layer-Deposited Thin Gadolinium Oxide High-k Gate Dielectrics

S. Dueñas, Helena Castán, H. García et al. · Journal of The Electrochemical Society · 2007 · 39 citations

Engineering, Cubic Thin Films, Silicon On Insulator +18

Experimental verification of intermediate band formation on titanium-implanted silicon

Helena Castán, E. Pérez, H. García et al. · Journal of Applied Physics · 2013 · 38 citations · Full text

Materials Science, Intermediate Band Formation, Electrical Engineering +13