P.M. Asbeck

Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor

Eric J Miller, X. Z. Dang, H. H. Wieder et al. · Journal of Applied Physics · 2000 · 119 citations

Wide-bandgap Semiconductor, Electrical Engineering, Capacitance Dispersion Studies +11

Correlation of threshold voltage of implanted field-effect transistors and carbon in GaAs substrates

R. T. Chen, D. E. Holmes, P.M. Asbeck · Applied Physics Letters · 1984 · 41 citations

A high-speed LSI GaAs 8x8 bit parallel multiplier

F.S. Lee, G. Kaelin, B.M. Welch et al. · IEEE Journal of Solid-State Circuits · 1982 · 32 citations

Electrical Engineering, Times/8 Bit Multiplier, Vlsi Design +10

A 26.5 GHz silicon MOSFET 2:1 dynamic frequency divider

M. Wetzel, L. Shi, K.A. Jenkins et al. · IEEE Microwave and Guided Wave Letters · 2000 · 30 citations

Dynamic Divider, Electrical Engineering, Dynamic Frequency Divider +9

InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions

Russell C. Gee, P.M. Asbeck, Chia‐Liang Lin et al. · Electronics Letters · 1993 · 23 citations

Semiconductors, Dopant Source, Electrical Engineering +11