Ling-Wu Yang - Concepedia

Author

Ling-Wu Yang

Macronix International (Taiwan)

Also Known As

Ling-Wu Yang

Publications

627

Citations

H-Index

Concepts

All Affiliations

Macronix International (Taiwan)National Tsing Hua University Southern Taiwan Science Park

About

Ling-Wu Yang is an author at Macronix International (Taiwan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	13	443
2	Applied Physics	13	13	443
3	Electrical Engineering	12	12	428
4	Computer Engineering	8	8	224
5	Materials Science	2	2	35

Ling-Wu Yang

Publications

559

Citations

H-Index

Page 1

	Year	Citations
BE-SONOS: A bandgap engineered SONOS with excellent performance and reliability Hang-Ting Lue, Szu-Yu Wang, Erh-Kun Lai, SemiconductorsNon-volatile MemoryElectrical EngineeringElectronic DevicesEngineering	2006	134
A highly scalable 8-layer 3D vertical-gate (VG) TFT NAND Flash using junction-free buried channel BE-SONOS device Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao,	2010	104
A Multi-Layer Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory Erh-Kun Lai, Hang-Ting Lue, Yi‐Hsuan Hsiao, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureBottom Layer	2006	70
A High-Speed BE-SONOS NAND Flash Utilizing the Field-Enhancement Effect of FinFET Tzu‐Hsuan Hsu, Hang-Ting Lue, Erh-Kun Lai, Non-volatile MemoryElectrical EngineeringEngineeringMicrofabricationNanoelectronics	2007	42
Reliability Model of Bandgap Engineered SONOS (BE-SONOS) Hang-Ting Lue, Szu-Yu Wang, Yi‐Hsuan Hsiao, Non-volatile MemoryEngineeringEmerging Memory TechnologyBandgap Engineered SonosElectromagnetic Compatibility	2006	29
Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP) Hang-Ting Lue, Tzu‐Hsuan Hsu, Yi‐Hsuan Hsiao, Device ModelingElectrical EngineeringField EffectEngineeringIncremental Step	2009	28
Study of sub-30nm thin film transistor (TFT) charge-trapping (CT) devices for 3D NAND flash application Tzu‐Hsuan Hsu, Hang-Ting Lue, Chih-Chang Hsieh, Non-volatile MemoryEngineeringEmerging Memory TechnologyIntegrated CircuitsNand Flash Application	2009	21
Physical and electrical characteristics of silicon oxynitride films with various refractive indices Jeng-Hwa Liao, Jung-Yu Hsieh, Hsing-Ju Lin, Journal of Physics D Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsVacuum Device	2009	20
Study of Local Trapping and STI Edge Effects on Charge-Trapping NAND Flash Hang-Ting Lue, Tzu‐Hsuan Hsu, Szu-Yu Wang, Non-volatile MemoryEngineeringVlsi DesignCharge-trapping Nand FlashCharge Transport	2007	18
Reliability and Processing Effects of Bandgap-Engineered SONOS (BE-SONOS) Flash Memory and Study of the Gate-Stack Scaling Capability Szu-Yu Wang, Hang-Ting Lue, Pei-Ying Du, IEEE Transactions on Device and Materials Reliability Bandgap-engineered Tunneling BarrierEngineeringBandgap-engineered SonosEmerging Memory TechnologyComputer Architecture	2008	18

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