Ming-Jinn Tsai

Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Yu-Ting Tsai, Ting‐Chang Chang, Wei-Li Huang et al. · Applied Physics Letters · 2011 · 46 citations

Non-volatile Memory, Electrical Engineering, Dymn2o5 Memory Devices +9

Silicon introduced effect on resistive switching characteristics of WOX thin films

Yong-En Syu, Ting‐Chang Chang, Tsung–Ming Tsai et al. · Applied Physics Letters · 2012 · 45 citations · Full text

Non-volatile Memory, Engineering, Si Interfusion +16

Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfO x RRAM devices

Chia-Wen Zhong, Wen-Hsien Tzeng, Kou‐Chen Liu et al. · Surface and Coatings Technology · 2012 · 39 citations

Electrical Characteristics, Non-volatile Memory, Electrical Engineering +8

Cerium oxide nanocrystals for nonvolatile memory applications

Shao-Ming Yang, Chao-Hsin Chien, Jiun-Jia Huang et al. · Applied Physics Letters · 2007 · 35 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics

Kou‐Chen Liu, Wen-Hsien Tzeng, Kow‐Ming Chang et al. · Thin Solid Films · 2011 · 26 citations

Materials Science, Engineering, Oxide Electronics +4