Hidehisa Hashizume

Lifetime Mapping Technique for Ultrathin Silicon-on-Insulator Wafers

Shingo Sumie, Futoshi Ojima, Keizo Yamashita et al. · Journal of The Electrochemical Society · 2004 · 28 citations

Electrical Engineering, Engineering, Differential Detection +12

Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method

Masashi Kato, Masahiko Kawai, Tatsuhiro Mori et al. · Japanese Journal of Applied Physics · 2007 · 28 citations

Engineering, Integrated Circuits, Excess Carrier Lifetime +16

Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime

Gen Washidzu, Tohru Hara, Ryuji Ichikawa et al. · Japanese Journal of Applied Physics · 1991 · 23 citations

Photo-acoustic Displacement, Electrical Engineering, Ion Implantation +11

Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution

Tatsuhiro Mori, Masashi Kato, Hideki Watanabe et al. · Japanese Journal of Applied Physics · 2005 · 16 citations

Engineering, Excess Carrier Lifetime, Defect Tolerance +18

Carrier Lifetime Measurements by Microwave Photoconductive Decay Method at Low Injection Levels

Chiyo Fujihira, Michel Morin, Hidehisa Hashizume et al. · Japanese Journal of Applied Physics · 1993 · 16 citations

Engineering, Integrated Circuits, Silicon On Insulator +17