Statistics
Publications
13
Citations
860
H-Index
13
Active since
2006
Affiliations
Samsung (South Korea)(Current)
S. O. Park is an author at Samsung (South Korea) specializing in microelectronics, materials science, and electronic materials.
Publications per year
2006–2020
13
13
Improvement of resistive memory switching in NiO using IrO2
D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations
Natural Sciences, Materials Engineering, Materials Science +16
Realization of vertical resistive memory (VRRAM) using cost effective 3D process
In-Hwan Baek, Chanyeol Park, Hyunsu Ju et al. · 2011 · 134 citations
Natural Sciences, Materials Engineering, Materials Science +17
Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic
Youjian Song, Ji‐Hyun Lee, Hee-Won Shin et al. · 2016 · 96 citations
1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology
Kyoobin Lee, J. Bąk, Yeonji Kim et al. · 2019 · 96 citations
Engineering, Computer Engineering, Electrical Engineering +17
Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node
Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 94 citations
Natural Sciences, Electrical Engineering, Materials Science +17
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