S. Shigetomi - Concepedia

Author

S. Shigetomi

Kurume University

Also Known As

S Shigetomi, S. Shigetomi, Shigenobu Shigetomi, Soyogu Shigetomi

Publications

943

Citations

H-Index

Concepts

All Affiliations

Kurume University University of Miyazaki Kyushu University Fukuoka University

About

S. Shigetomi is an author at Kurume University specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	33	730
2	Applied Physics	17	33	730
3	Electrical Engineering	12	14	393
4	Natural Sciences	10	14	291
5	Chemistry	6	7	128

S. Shigetomi

Publications

661

Citations

H-Index

Page 1

	Year	Citations
Electrical Properties of Bi<sub>2</sub>Te<sub>3</sub> S. Shigetomi, Sigeyasu Mori Journal of the Physical Society of Japan EngineeringThermoelectricsElectronic StructureElectrical PropertiesThermal Conductivity	1956	56
Electrical and photovoltaic properties of Cu-doped p-GaSe/n-InSe heterojunction S. Shigetomi, Tetsuo Ikari Journal of Applied Physics EngineeringCleavage SurfaceOptoelectronic DevicesIntegrated Circuits/Inse Heterojunctions	2000	51
Crystal Structure and Raman Spectra of InSe Tetsuo Ikari, S. Shigetomi, Kazuyuki Hashimoto physica status solidi (b) Crystal StructureEngineeringPolarized RamanInse Single CrystalsOptical Characterization	1982	45
Optical and electrical properties of layer semiconductor <i>p</i>-GaSe doped with Zn S. Shigetomi, Tetsuo Ikari, Hiroshi Nakashima Journal of Applied Physics Optical MaterialsEngineeringCrystal Growth TechnologyOptoelectronic DevicesChemistry	1993	43
Photoconductivity and Photo-Hall Effect of p-Type InSe Single Crystals Shigeru Shigetomi, Tetsuo Ikari, Yutaka Koga, Japanese Journal of Applied Physics EngineeringPhoto-hall EffectOptoelectronic DevicesSemiconductorsIi-vi Semiconductor	1981	39
Photoluminescence spectra of <i>p</i>-GaSe doped with Cd S. Shigetomi, Tetsuo Ikari, Hideki Nishimura Journal of Applied Physics EngineeringCd-doped GaseChemistryLuminescence PropertyIi-vi Semiconductor	1991	31
Annealing behavior of electrical properties of n-InSe single crystals S. Shigetomi, Tetsuo Ikari, Yasuhiko Koga, physica status solidi (a) Electrical EngineeringN-inse Single CrystalsEngineeringCrystal MaterialNanoelectronics	1984	26
Impurity levels in layer semiconductor <i>p</i>-GaSe doped with Mn S. Shigetomi, Tetsuo Ikari, Hiroshi Nakashima Journal of Applied Physics EngineeringSemiconductorsIi-vi SemiconductorNanoelectronicsQuantum Materials	1994	26
Temperature dependence of photoluminescence of layer semiconductor p-GaTe S. Shigetomi, Tetsuo Ikari, Hideki Nishimura Journal of Luminescence PhotoluminescenceEngineeringTemperature DependenceApplied PhysicsOptoelectronics	1998	25
Zn-induced impurity levels in layer semiconductor InSe S. Shigetomi, H. Ohkubo, Tetsuo Ikari, Journal of Applied Physics Ii-vi SemiconductorElectrical EngineeringZn-doped InseEngineeringPhotoluminescence	1989	25

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