Journal of the Physical Society of Japan · 1956 · 58 citations · 3 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSolid State PhysicsElectrical ConductivityElectronic Band StructureThermoelectric MaterialsWide Band Gap SemiconductorsWide-bandgap SemiconductorsBand GapConductionElectrical PropertiesHall EffectMobility RatioP-type ConductivityTemperature Dependence Of Electrical PropertiesThermoelectric Properties
The conductivity, the Hall coefficient and the thermoelectric power of the compound Bi 2 Te 3 have been measured over the temperature range from 100°K to 750°K. The specimens used show electrical conduction of p -type at room temperature and the hole mobility temperature dependence is represented by the relation µ h =1.2×10 8 T -2.3 . It is found that the forbidden energy gap E G is 0.21 eV at 0°K, and the effective masses of holes and electrons are, respectively, 1.26 m and 1.07 m , and the mobility ratio b is about 1.7.
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Electrons and holes in semiconductors
M.D. Earle · Journal of the Franklin Institute · 1951 · 1.2K citations