Hirokazu Fujiwara

Relationship between threading dislocation and leakage current in 4H-SiC diodes

Hirokazu Fujiwara, Hideki Naruoka, Masaki Konishi et al. · Applied Physics Letters · 2012 · 99 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

Hirokazu Fujiwara, Hideki Naruoka, Masaki Konishi et al. · Applied Physics Letters · 2012 · 61 citations

Electrical Engineering, Engineering, Dislocation Interaction +13

Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes

T. Katsuno, Yukihiko Watanabe, Hirokazu Fujiwara et al. · Applied Physics Letters · 2011 · 55 citations · Full text

Atomic Force Microscopy, Engineering, Semiconductor Device +17

Effects of Surface and Crystalline Defects on Reverse Characteristics of 4H-SiC Junction Barrier Schottky Diodes

T. Katsuno, Yukihiko Watanabe, Hirokazu Fujiwara et al. · Japanese Journal of Applied Physics · 2011 · 22 citations

Materials Engineering, Electrical Engineering, Engineering +10

Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress

Yohei Iwahashi, Masaki Miyazato, M. Miyajima et al. · Materials science forum · 2017 · 16 citations

Fault Geometry, Electrical Engineering, Engineering +13