Hideki Naruoka

Relationship between threading dislocation and leakage current in 4H-SiC diodes

Hirokazu Fujiwara, Hideki Naruoka, Masaki Konishi et al. · Applied Physics Letters · 2012 · 99 citations

Semiconductor Technology, Electrical Engineering, Engineering +9

Impact of surface morphology above threading dislocations on leakage current in 4H-SiC diodes

Hirokazu Fujiwara, Hideki Naruoka, Masaki Konishi et al. · Applied Physics Letters · 2012 · 61 citations

Electrical Engineering, Engineering, Dislocation Interaction +13

Analysis of surface morphology at leakage current sources of 4H–SiC Schottky barrier diodes

T. Katsuno, Yukihiko Watanabe, Hirokazu Fujiwara et al. · Applied Physics Letters · 2011 · 55 citations · Full text

Atomic Force Microscopy, Engineering, Semiconductor Device +17

Analysis of Nitrogen State on MOS Interface of 4H-SiC m-Face after Nitric Oxide Post Oxidation Annealing (NO-POA)

Kimimori Hamada, Akira Mikami, Hideki Naruoka et al. · e-Journal of Surface Science and Nanotechnology · 2017 · 25 citations · Full text

Engineering, Oxidation Resistance, Mos Interface +18