Wei Hsu

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

C. H. Wang, S. W. Wang, G. Doornbos et al. · Applied Physics Letters · 2013 · 35 citations

Wide-bandgap Semiconductor, Engineering, Cm−2 Ev−1 +16

The δ-Doped In_0.25Ga_0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition^*

Chun‐Yen Chang, Wei-Chen Lin, Wei Hsu et al. · Japanese Journal of Applied Physics · 1991 · 28 citations

Semiconductors, Materials Science, Electrical Engineering +14

High-temperature thermal stability performance in /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As metamorphic HEMT

Wei Hsu, Yeong-Jia Chen, Ching-Sung Lee et al. · IEEE Electron Device Letters · 2005 · 25 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Device +17

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

C. H. Wang, G. Doornbos, Gvidas Astromskas et al. · AIP Advances · 2014 · 18 citations · Full text

Wide-bandgap Semiconductor, Dielectrics, Engineering +21

Investigations of AlGaN/GaN MOS-HEMT with Al₂O₃deposition by ultrasonic spray pyrolysis method

Bo-Yi Chou, Wei Hsu, Han-Yin Liu et al. · Semiconductor Science and Technology · 2014 · 15 citations

Materials Science, Materials Engineering, Electrical Engineering +12